A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
proceedings IEDM 2012, The IEEE International Electron Devices Meeting. - 2012
Références BibTex
@InProceedings{MBDSCMMMMVMZ12,
author = {Meneghini, M. and Bertin, M. and dal Santo, G. and Stocco, A. and Chini, A. and Mura, G. and Musu, E. and Vanzi, M. and Meneghesso, G.},
title = {A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps},
booktitle = {proceedings IEDM 2012, The IEEE International Electron Devices Meeting.},
series = {The IEEE International Electron Devices Meeting.},
year = {2012},
keywords = {Al GAn degradetion mechanism, Failure analysis},
url = {https://publications.crs4.it/pubdocs/2012/MBDSCMMMMVMZ12},
}